:: 연세대학교 유연전자소재 안종현교수 연구실 ::

Strain engineered electronic devices

New approach for strain engineering
Current strain engineering methods have several drawbacks: they generate atomic defects
in the interface between Si and strain inducers. We developed the formation of a strained
semiconductor membrane with oxidation-induced residual strain by releasing a host mother
substrate of wafer.
Device applications using strain engineering techinque
We demonstrated the improved performance in the thin Si TFTs, MTJs on a flexible substrate
by strain engineering without relying on the epitaxial stressor. This process can be applicable
for various flexible electronic devices. This approach shows promise for strain-engineered
large-area flexible electronics with high performance and productivity.