Flexible Electronic
Device Laboratory

The aim of our research group is to develop the high performance flexible and stretchable electronic systems using unusual classes of inorganic semiconductor materials in forms of nanoscale ribbons, nanomembrane, micro/nano-wires and one atomic layer film.

Currently, we are exploring integration methods including dry transfer techniques for patterning nanomaterials onto flexible substrates and ultra thin devices for the stretchable and conformal electronics.

Additionally, the strained engineered electronics would produce the ultra high performance for flexible devices. 

Our future picture is interesting opportunities for transparent and stretchable displays and sensitive electronic skins.

  • Stretchable high performance electronics
    Promising technologies for stretchable electronics that overcome the limitations of conventional electronics enable applications that are electronic skins, wearable electronic devices, stretchable displays, and electronics circuits. Using buckled graphene interconnects, our research group demonstrates stretchable Si logic devices that overcome the mechanical limitations such as poor stretchability and weakness to bending strain. The combination of Si and graphene can achieve both of good performance and stretchability
  • Ultrathin 2D material-based electronic skin application
    One of the strategy for conformal devices is to make the device highly flexible and ultrathin. Highly flexible and ultrathin conformal devices on unconventional substrates have been researched for new applications that are healthcare monitoring systems, biotechnology, wearable electronics and e-skin
  • Heterogeneous integrated circuits using two dimensional materials
    The availability of advanced equipment and methods, together with a growing understanding of 2D materials, has led to a burgeoning research interest into an entirely new range of 2D materials, including transition metal dichalcogenides (TMDCs) that have advantages such as transparency, mechanical flexibility and tunable bandgaps. To harvest the full advantages of metallic graphene and semiconducting MoS2, it is highly advantageous to study the issues critical to device application for graphene–MoS2 heterojunctions
  • New approach of strain engineering for high performance devices
    Since the biaxial tensile strain applied to the Si channel reduced the inter-valley scattering and effective mass of electrons, the suspended and transferred Si TFTs showed a 19~40% increase in carrier mobility as compared with the unstrained devices on a bulk wafer.
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