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2D Materials
High performance
flexible electronics
Strain engineered devices
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2-dimensional materials
Synthesis of various 2D materials
For the last ten years, 2D materials emerged among many researchers headed by one
atomic layer of graphite (graphene). We synthesized graphene and other 2D materials
using chemical vapor deposition (CVD) and solution-based process on various substrates.
Our aim for the synthesis of 2D materials is large area and uniform synthesis of it.
2D material based ultra-thin heterogeneous devices
The unique properties of 2D materials enable to demonstrate the various emerging
applications such as wearable electronics, bio-engineering devices and human-machine
interfaces. Our research in the 2D material-based electronics could inspire the development
of the technologies of near future electronics.
High performance flexible electronics
Roll based transfer technique of inorganic thin-film
Theroll-based transfer enables integration of heterogeneous thin film devices on aarbitrary
substrate while preserving excellent electrical and opticalproperties of these devices,
comparable to their bulk properties. Allroll-based transfer procedures could enable the high
productivity and largearea scalability.
Inorganic based high performance flexible / stretchable devices
Flexible/ stretchable electronics have led to promising classes of electronic device
applications such as tactile sensors for artificial electronic skins, wearableelectronic devices,
stretchable displays, and electronic circuits.
Strain engineered electronic devices
New approach for strain engineering
Current strain engineering methods have several drawbacks: they generate atomic defects
in the interface between Si and strain inducers. We developed the formation of a strained
semiconductor membrane with oxidation-induced residual strain by releasing a host mother
substrate of wafer.
Device applications using strain engineering techinque
We demonstrated the improved performance in the thin Si TFTs, MTJs on a flexible substrate
by strain engineering without relying on the epitaxial stressor. This process can be applicable
for various flexible electronic devices. This approach shows promise for strain-engineered
large-area flexible electronics with high performance and productivity.