Research

  • 2-dimensional materials

  • Synthesis of various 2D materials

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  •                 점 For the last ten years, 2D materials emerged among many researchers headed by one
  •                  atomic layer of graphite (graphene). We synthesized graphene and other 2D materials 
  •                  using chemical vapor deposition (CVD) and solution-based process on various substrates. 
  •                  Our aim for the synthesis of 2D materials is large area and uniform synthesis of it.


  •          2D material based ultra-thin heterogeneous devices

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  •                점 The unique properties of 2D materials enable to demonstrate the various emerging
  •                 applications such as wearable electronics, bio-engineering devices and human-machine
  •                 interfaces. Our research in the 2D material-based electronics could inspire the development 
  •                 of the technologies of near future electronics.


  • High performance flexible electronics

  • Roll based transfer technique of inorganic thin-film

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  •                점 Theroll-based transfer enables integration of heterogeneous thin film devices on aarbitrary
  •                 substrate while preserving excellent electrical and opticalproperties of these devices,
  •                 comparable to their bulk properties. Allroll-based transfer procedures could enable the high
  •                 productivity and largearea scalability.


  •          Inorganic based high performance flexible / stretchable devices

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  •                점 Flexible/ stretchable electronics have led to promising classes of electronic device
  •                 applications such as tactile sensors for artificial electronic skins, wearableelectronic devices,
  •                 stretchable displays, and electronic circuits. 

  • Strain engineered electronic devices

  • New approach for strain engineering

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  •                점 Current strain engineering methods have several drawbacks: they generate atomic defects
  •                  in the interface between Si and strain inducers. We developed the formation of a strained
  •                  semiconductor membrane with oxidation-induced residual strain by releasing a host mother
  •                  substrate of wafer.




  •          Device applications using strain engineering techinque 

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  •                점 We demonstrated the improved performance in the thin Si TFTs, MTJs on a flexible substrate 
  •                 by strain engineering without relying on the epitaxial stressor. This process can be applicable
  •                 for various flexible electronic devices. This approach shows promise for strain-engineered
  •                 large-area flexible electronics with high performance and productivity.